MOSFET Conduction and Switching Loss Calculator
Separate constant-current conduction, switching-overlap and external gate-drive power terms under a bounded approximate model.
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Calculation steps
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How to calculate
Compute idealized term powers while keeping driver charge demand separate from MOSFET conduction and overlap dissipation.
Pcond=I²R D; Poverlap≈VI(tr+tf)f/2; Pgate=QgVdrive f
Worked example
For 48 V, 10 A, R=0.01 Ω, duty 50%, f=100 kHz, tr=tf=20 ns and Qg=50 nC at 10 V, conduction is 0.5 W, overlap is 0.96 W and gate drive 0.05 W.
Assumptions and input details
Periodic hard switching with constant on-interval current. Enter the actual relevant hot RDS(on), switching overlap times and gate charge. Total rise/fall time must be no more than 20% of the period for this limited approximation. Gate-drive power is not automatically assigned to the MOSFET junction. Output excludes capacitance energy, reverse recovery, body diode, dead time and thermal feedback; no junction temperature, heat-sink selection or rating assessment is supplied.
References: TI: conduction and approximate overlap loss terms
Unit definitions
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Using this calculator
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Results use floating-point arithmetic and displayed rounding. Read the formula, assumptions and any stated data precision before interpreting the result.
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