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MOSFET SQUARE LAW BIAS

MOSFET Square Law Bias Calculator

Solve a grounded-source ideal enhancement NMOS with a drain resistor using cutoff, triode or saturation equations.

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Result

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Calculation steps

Work through one step at a time or reveal the complete calculation. The steps use your current inputs.

    How to calculate

    Test the saturation candidate against its Vds condition, otherwise bracket the triode load-line intersection.

    Saturation Id=k(Vgs−Vth)²/2; triode Id=k((Vgs−Vth)Vds−Vds²/2)

    Worked example

    With Vgs≤Vth the ideal model has zero drain current and Vds equals supply.

    Assumptions and input details

    Long-channel square-law model without channel-length modulation, body effect, leakage, subthreshold current or thermal effects. Parameter k uses the explicit one-half convention. No power/rating or physical device recommendation.

    Unit definitions

    Unit selection is independent of language. Each selector contains only units for its physical quantity. Calculations use defined base units internally.

    SI prefixes are explicit: for example, milli means one thousandth, micro one millionth and kilo one thousand. Changing a unit changes the interpretation of the entered number.

    NIST measurement tables

    Using this calculator

    Can I enter my own problem?

    Yes. Replace the example values with your own inputs. The result, calculation steps, tables and applicable diagrams update from those inputs. Blank or invalid values clear the result; example values are never silently substituted for missing inputs.

    Are the results exact?

    Results use floating-point arithmetic and displayed rounding. Read the formula, assumptions and any stated data precision before interpreting the result.

    Is my input uploaded?

    The calculation runs in your browser. No account, file upload or external AI service is required. Inputs are not saved between page reloads.

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